Localized thick-contact 2D tellurium semiconductors yield 50X drop in contact resistance and 17X increase in on-state current
https://www.eurekalert.org/news-releases/1130440 "ultra-dense, sub-2nm transistors replacing silicon. making thin enough to suppress leakage current enlarges energy barrier, severely restricting electron flow... overcome using Raised Source and Drain structure, depositing additional tellurium to selectively thicken only areas directly in contact with metal electrodes... implemented using standard, low temperature large-area sputtering deposition... highly scalable/ commercially viable platform accelerating high-performance 3D microchip production"