Reversible transition between nonpolar/ polar states in ultra-thin zirconia layers enables CMOS compatible, high-speed, low-power memory
https://phys.org/news/2026-04-zirconia-thin-reversible-nonpolar-polar.html "zirconia nonpolar, but polar needed for memory to be non-volatile, overcome thinning to nm-scale and applying strain/ electric fields... phase repeatedly flippable (millions of cycles) without crystal lattice degradation... leading candidate hafnia also can toggle phases but not as resiliently, and needs higher voltage, causing hotter-running chips/ shorter battery life... combines SRAM's speed with flash's non-volatility/ energy efficiency... neuromorphic computing, energy harvesting, ultra-dense capacitors"