Harnessing atomic structure to advance semiconductor technology
https://www.eurekalert.org/news-releases/1151543 Summary: Local atomic defect configurations manipulated within phase-change chalcogenide alloys to optimize data retention speeds in non-volatile memory devices. Controlling atomic-level ordering pathways accelerates crystallization switching kinetics while minimizing electrical reset energy requirements. Provides semiconductor foundries critical manufacturing blueprints for fabricating ultra-dense, low-latency storage-class memory chips for high-performance computing.