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Showing posts with the label 2D materials

Overlooked 2D indium selenide phase enables uniform, wafer-scale fabrication of high-mobility ultrathin logic transistors

https://techxplore.com/news/2026-10-overlooked-indium-selenide-phase-enables.html "2D semiconductors offer high electron mobility but difficult scaling down to industrial wafer sizes without structural defects... overcome precisely controlling phase conversion during synthesis, producing highly crystalline, defect-free films operating reliably across full semiconductor wafers... integrated logic transistor arrays built from this material demonstrate exceptional electrical performance and signal uniformity"

Heavy fermions emerge at interface between 2D ytterbium–copper compound and substrate, inspiring quantum material design

https://phys.org/news/2026-10-heavy-fermions-emerge-atomic-layer.html "heavy fermions occur when conduction electrons strongly interact with localized magnetic moments, effectively acquiring effective masses hundreds of times larger than that of a free electron... new mechanism for tuning strongly correlated electron behavior generates synthetic heavy fermions at 2D interfaces bypassing rare-earth 3D bulk crystal growth constraints... opens up groundbreaking routes for custom low-dimensional quantum computing materials and unconventional superconductors"

Flexible form of boron exhibiting 10M times increased electrical conductivity can transform electronics, energy storage, flexible technology

https://phys.org/news/2026-09-flexible-boron-million-electrically.html "boron rigid/ exhibits high electrical resistance, overcome synthesizing atom-thick boron sheet on specialized 2D substrate, allowing bending and stretching without fracturing or losing its functional structural integrity... high conductivity, exceptional thermal stability/ mechanical strength under strain... these dual properties make the material a promising candidate for next-generation flexible electronics, wearable devices, and high-performance energy storage technologies"

High-purity 2D MXenes synthesized using chemical vapor deposition precursors to avoid use of hazardous liquid acid etching

https://www.eurekalert.org/news-releases/1144417 "MXene production relies on complex, multi-step, hazardous, expensive, difficult to scale liquid acid etching of ceramic precursors... these steps bypassed furnace heating lower-cost precursors (like titanium tetrachloride, methane)... reaction space confined/ titanium surface area controlled, causing crystalline MXene flakes to self-organize/ expand laterally into large-area, low-defect domains... scalable, low-cost, wafer-scale MXene based electronics, optics, quantum technology, batteries, sensors"

Synthesized nanostructured thermal insulation sets record for ultra-low thermal conductivity in microelectronics, aerospace, energy storage

https://www.eurekalert.org/news-releases/1143869 "2D  hybrid organic-inorganic perovskite also highly rigid...  r eplacing carbon-carbon chains with tailored benzene rings in its organic layers achieves room-temperature approximately 0.04 W m⁻¹ K⁻¹  thermal conductivity , approaching  non-porous solids'  theoretical lower limit, 5X  better/ 700 to 10,000X stiffer than silicone... overcomes rigidity/ heat conduction trade-off... can be spun-cast/ printed as coatings at scale...  microelectronics, cookware, and aerospace thermal protection"

Converting microwave signals onto light using 2D magnetic materials links isolated quantum processors over fiber-optic networks

https://www.eurekalert.org/news-releases/1144473 "via magnons inside layered magnetic semiconductor chromium sulfide bromide, operating as transducer modulating excitons subsequently imprinting original microwave data onto reflected laser light... conversion achieves approximately 300 MHz bandwidth in bulk crystal without requiring external optical or microwave resonators...material's layered structure allows it to be thinned to just a few atomic layers, offering a flexible and scalable platform to build more compact hybrid quantum devices" Related: Magnets could help quantum computers talk to each other, says researcher https://phys.org/news/2026-09-magnets-quantum.html

Ferroelectricity in an ultrathin titanium dioxide film is stable down to near-atomic thickness for ultra-low-power non-volatile memory/ logic

https://techxplore.com/news/2026-09-ferroelectric-material-stable-atomic-thickness.html "materials that lose electrical polarization at atomic scales, overcome reducing titanium dioxide to <3 nm thick layer enabling ferroelectric properties, maintained down to approximately 1 nm... ferroelectric materials switch electric polarizations at much lower voltages... properties retained across various substrates, atomic layer deposition synthesizable at <400°C... CMOS fabrication compatible, scalable pathway toward next-generation 3D integrated microelectronics"

Controllable meron/ antimeron polar vortex states inside twisted bilayer tungsten diselenide 2D semiconductor moiré lattices

https://phys.org/news/2026-09-tiny-whirlpools-discovered-in-atom-thin-semiconductor.html "previously restricted to significantly thicker oxide materials, but now generated stacking 2 single-atom-thin sheets/ applying tiny 0.1-degree twist... distinct structural contributions of material twist versus mechanical strain... pathway toward controlling nanoscale electrical states via electric fields or strain engineering, laying the foundation for ultra-low-energy topological electronics and next-generation computing hardware" Related:  Reading beyond the peaks: Optical analysis decodes spectral complexity in twisted semiconductor layers https://phys.org/news/2026-10-peaks-optical-analysis-decodes-spectral.html

Quantum-tunneling field-effect transistor bypasses fundamental Boltzmann limit of silicon to enable ultra-low-power ICs, AI hardware

https://www.polyu.edu.hk/media/media-releases/2026/0831_polyu-develops-quantum-tunnelling-field-effect-transistor "semiconductor / AI computing hardware energy consumption constraints overcome using alternating 2D bismuth/ indium selenide layers fabricated via pulsed laser deposition... charge carriers tunnel quantum mechanically rather than relying on thermionic emission, enabling room-temperature operation using 160 (was 800) mV gate-voltage range... high: output current/ ON-OFF current ratio, needed to drive multiple downstream logic gates... scalable, CMOS fabrication compatible"

Ultra-thin carbon-based insulator maintains high dielectric strength preventing electrical leakage/ quantum tunneling in sub-nm logic gates

https://www.eurekalert.org/news-releases/1140661 "surface roughness/ sub-nm interface gaps govern electron leakage far more than material's intrinsic insulating capacity... uses monolayer hexagonal boron nitride and transition metal dichalcogenides across varied electrode architectures... provides actionable design guidelines for semiconductor engineers to build smaller, more reliable, and energy-efficient 2D logic devices and ultra-thin memory hardware" Related: Innovative metasurfaces offer a new way to block radiant heat https://www.eurekalert.org/news-releases/1140897

Slow electron movement while maintaining quantum coherence in 2D van der Waals magnet advances non-volatile memory devices

https://www.eurekalert.org/news-releases/1139512 "quantum many-body phenomenon persisting up to 100°K: flat electronic band in 2D van der Waals Fe5GeTe2 magnet where millions of electrons move collectively/ unusually slowly, defying existing theoretical predictions regarding the material's magnetic interactions and properties... by demonstrating that laser pulses can switch the material between different magnetic phases, scientists hope to leverage these slow-electron states to develop advanced memory storage devices"

Theoretical study predicts stacked 2D boron layers could achieve record-high superconducting transition temperatures

https://phys.org/news/2026-08-boron-layers-superconductivity-theoretical.html "atomic-scale interaction/ electron-phonon coupling analysis of stacked boron configurations identifies bilayer structures that can sustain stable superconducting states at substantially higher temperatures... overcomes severe substrate interference that degrades single-layer borophene performance... blueprint for engineering high-temperature 2D superconductors for energy-efficient microelectronics and next-generation quantum devices"

Foundry-compatible routes achieving ultra-low resistance Ohmic contacts enable sub-1nm 2D transistor scaling

https://www.eurekalert.org/news-releases/1137988 "2D semiconductor-metal interfaces exhibit Fermi-level pinning/ high contact resistance, degrading dichalcogenides' carrier mobility, overcome establishing low-energy semimetallic contacts (bismuth/antimony)/ van der Waals integration forming Ohmic Schottky contacts without damaging atomic monolayers... <100 â„¦ Î¼m contact resistance, maintaining thermal stability during standard back-end-of-line integration... field-effect transistors"

Dry van der Waals lamination squeezing out interfacial polymers/ contaminants, atomically cleaning 2D semiconductor heterostructures

https://www.eurekalert.org/news-releases/1137517 "transfer processes during 2D electronics assembly use organic sacrificial polymers leaving trapped micro-bubbles, interfacial polymer residues, airborne hydrocarbons, nm-scale contaminants, degrading charge carrier mobility/ layer-to-layer contact quality... overcome controlling mechanical pressure/ lamination dynamics across atomically flat surfaces, improving device-to-device uniformity/ enhancing electronic performance... scalable manufacturing route for: wafer-scale 2D transistors, vertical 3D ICs"

Controlling nanoscale structural gaps in 2D material layers is a powerful tuning mechanism for microelectronics/ non-volatile memory

https://phys.org/news/2026-07-nanoscale-gaps-reveal-atom-thin.html "maps design rules for atomic-scale, gap-controlled 2D materials... when 2D materials placed on slightly uneven metal electrodes, nanoscale gaps form at interface, altering distance electrons must cross... these gaps have greater impact on quantum tunneling/ unwanted electrical leakage creation than material's properties... practical guidance for engineers to control leakage currents, paving the way for smaller, more energy-efficient computer chips and ultra-thin memory devices"

Stacking 2D materials cleanly, eliminating contamination/ defects, advances quantum device commercial viability/ performance

https://www.eurekalert.org/news-releases/1136049 "2D manufacturing relies on messy synthetic adhesive polymers leaving behind microscopic chemical residues degrading electronic/ quantum performance... overcome substituting with highly flat/ stable, natural, inorganic mica to stack 2D layers, precisely aligning layers of materials like graphene without introducing contamination... critical step forward for nanotechnology, promising to unlock faster, more reliable microchips and advanced quantum computing components"

On-chip optical switch uses transparent conductive 2D aluminum-doped zinc oxide to redirect light beams in less than trillionth of second

https://phys.org/news/2026-07-chip-redirects-trillionth.html "exhibits massive optical properties' change when excited by control laser pulse... orders of magnitude faster than silicon-based electronic or thermal switches... no moving parts, significantly reducing energy loss/ signal degradation... scalable blueprint for building next-generation optical computers and routing structures for high-speed scalable routing for optical computing backbones/ high-bandwidth 6G telecommunication networks"

Flared, dog-bone layout for sub-nm 2D transistors drastically lowers electrical contact resistance that limits performance at atomic scales

https://techxplore.com/news/2026-06-dog-bone-2d-nanoribbon-transistors.html "atomic scale rectangular nanoribbon transistors exhibit contact resistance where metal leads meet thin channel, degrading electrical current limiting performance... overcome widening contact regions at ends while keeping central channel ultra-narrow... maintains high-velocity carrier injection/ energy efficiency as post-silicon 2D semiconductor dimensions continue scaling downward under Moore's Law... enables carrying significantly higher current densities without experiencing typical miniaturization bottlenecks" Related: Atom-thin material could overcome key transistor bottleneck for next-generation computer chips https://techxplore.com/news/2026-10-atom-thin-material-key-transistor.html

Definitive hallmark of superconductivity, Meissner effect, has been confirmed inside 2D quantum van der Waals superconductors

https://www.eurekalert.org/news-releases/1133816 "2D materials' small volume/ weak magnetic signals forces using electrical 0-resistance measurement to infer superconductivity rather than proving its magnetic hallmarks... overcome using ultra-sensitive dynamic cantilever magnetometry detecting minute magnetic moment changes down to hundred-thousandth of billionth of Ampere-meter squared... exhibits type-II superconductivity using layered tungsten disulfide as a model... topological quantum hardware resistance-free quantum circuits" Related: Researchers develop layer-sliding strategy to engineer quantum states in 2D materials https://www.eurekalert.org/news-releases/1135619

Inducing moiré electronic patterns in 2D materials using localized strain rather than manually twisting/ vertically stacking atomic sheets

https://phys.org/news/2026-06-strain-moir-2d-materials-stacking.html "manual stacking tedious/ high defect rates, overcome using patterned substrate deforming single monolayer sheet, creating periodic, controlled nanostructures mimicking twisted bilayer interface electronic potentials without introducing physical interfaces/ structural misalignments... single-layer strain approach highly reproducible/ manufacturing-compatible... Moiré physics opens door to highly scalable 2D exotic quantum states, superconductivity, microelectronics" Related: Photoexcitation flips 2D moiré devices from metals to insulators in ultrafast test https://phys.org/news/2026-06-photoexcitation-flips-2d-moir-devices.html