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Showing posts with the label 2D materials

Interface between many popular semiconductors and their insulators leaves gap when miniaturized; unsuitable for newer computer chips

https://www.eurekalert.org/news-releases/1124924 "interface between 2D semiconductors (like graphene or molybdenum disulfidese) and their insulating layers (oxides) held together only by weak van der Waals forces/ never truly touch (0.14 nm gap), weakens capacitive coupling/ gate loses ability to precisely manage electric fields... developed method finding material combinations bonding more strongly to avoid gap instead of studying 2D materials in isolation... gap-less material pairings with potential to succeed in ever more compact high-performance computing"

First demonstration of bright, stable single-photon emission at room temperature using 2D semiconductors

https://www.eurekalert.org/news-releases/1124030 "quantum light sources (quantum information bits) only function at extreme cryogenic temperatures, overcome locally straining 2D transition metal dichalcogenide creating nanobubbles/ wrinkles, forcing exciton trapping in tiny space enabling pure/ bright single photon emissions... allows quantum component integration into standard fiber-optics.... strain enables color (wavelength) tuning... quantum cryptography/ computing, sensing, biological imaging... future: electrical triggering, quantum LED (instead of laser)"

First synthetic charged domain wall in a 2D material demonstrated by stacking/ twisting 2 layer 2D boron nitride at specific angles

https://www.eurekalert.org/news-releases/1122589 "location, shape, electrical property control through mechanical twisting rather than chemical growth... carry concentrated electrical charge, effectively 1D conducting wires embedded within insulator, can turn wires on/ off... applying external electric field can flip polarization making wall conduct/ resist electricity... causes memory to be non-volatile... allows layering materials with vastly different polarizations (low/ high)... significantly smaller/ more energy-efficient.. nanoelectronics"

New form of magnetism in four-layer twisted 2D chromium iodide produces stable skyrmions, for ultra‑dense data storage

https://www.eurekalert.org/news-releases/1115520 "skyrmions: tiny, stable magnetic patterns that could serve as ultra‑small carriers of storage data... the newly discovered magnetic states in twisted 2D materials are promising because: they could enable very high‑density data storage... skyrmion magnetic structures are stable against disturbances, which is crucial for reliable memory devices... signals were extremely weak, overcome using quantum sensing microscope based on nitrogen‑vacancy centers in diamond"

Thin-film survives harsh plasma etching and acts as a superior lithography mask, for smaller/ more advanced semiconductor chips

https://www.psu.edu/news/materials-research-institute/story/atom-thin-material-could-help-solve-chip-manufacturing-problem "etching extremely deep/ narrow structures into silicon using high-energy plasma can damage masks patterning chips, distorting patterns... resolved using atomically thin 2-D material with very high-aspect-ratio structure for advanced chips... significantly improves fabrication of next-generation semiconductors by: maintaining sharp nanoscale patterns even in harsh processing conditions enabling smaller (supports Moore’s law), more precise chip features, improving manufacturing reliability" Related: New tool measures wafer thin films 100x faster with picometer precision https://www.eurekalert.org/news-releases/1120416

Large-area molybdenum disulfide can significantly reduce energy loss in magnetic memory films enabling devices to run faster/ cooler

https://www.eurekalert.org/news-releases/1119058 "grow permalloy (common magnetic alloy) on top of 2D molybdenum disulfide via chemical vapor deposition... ultra-clean interface between layers reduces surface energy loss, while internal structural changes cause only slight increase in internal energy loss... scalable: unlike small, laboratory-scale flakes, uses large-area molybdenum disulfide compatible with mass-manufacturing... high-speed/ lower-power spintronic computing due to reduced energy loss (damping), MRAM"

Creating atomic-scale vacancies/ defects by controlling where specific molecules attach in 2D graphene or molybdenum disulfide

https://phys.org/news/2026-01-molecule-deposition-2d-materials-defect.html "chemically modifies inert surfaces without destroying unique electrical properties... defects act as anchors... applications: The ability to "decorate" 2D sheets with specific molecules opens doors for highly sensitive chemical sensors, more efficient catalysts, and molecular-scale transistors. In short, the study transforms "defects" into a tool for the bottom-up assembly of hybrid materials, providing a roadmap for more sophisticated and scalable 2D device manufacturing... electronics, sensors"

More efficient semiconductor memory device is atomic scale without suffering from increased heat, leaking current or losing data stability

https://phys.org/news/2026-02-smaller-device-scaling-memory.html "2D molybdenum disulfide, much lower switching voltages, higher data storage density... bridges gap between volatile memory (fast but loses data without power, like RAM) and non-volatile memory (slower but keeps data, like a hard drive), creating a best of both worlds scenario for future computing... artificial intelligence/ edge computing (where the demand for dense, low-power memory is rapidly outstripping the capabilities of current silicon hardware)... smartphones, laptops, data centers"

Algorithm extracts directional information from noisy 2D datasets; more effective as detector resolution/ computing power increases

https://techxplore.com/news/2026-02-noisy-2d-algorithm-imaging-ai.html "slow signal-to-noise ratios: overcome using mathematically grounded filtering of noise from signal... resolution limited by fixed templates: overcome using scales with improved detector resolution... pattern-recognition using Frobenius norm distance formula rotates reference dataset/ compares to measured data, identifies rotation yielding smallest difference, pinpointing signal's source direction... medical imaging, machine learning, weather mapping, neutrino trajectory/ cosmic event tracking"

Sub-10nm molybdenum disulfide semiconductor chips found ideal using formula rather than trial-and-error, for faster/ more power-efficient devices

https://techxplore.com/news/2025-12-formula-energy-barriers-2d-chips.html "more accurate predictive formula addresses contact resistance hindering 2D semiconductor commercialization... ultra-scaled molybdenum disulfide chips thinner/ more efficient than silicon-based... Schottky barrier forms when materials touch metal electrodes, blocking electron flow... when semi-metallic bialkali metals approach 2D semiconductor at specific angles, electron pathways within molybdenum disulfide expand, lowering barrier.. also, vacuum level energy level shift significantly alters barrier height" Related: TSMC says started mass production of 'most advanced' 2nm chips https://techxplore.com/news/2025-12-tsmc-mass-production-advanced-2nm.html Tiny tech, big AI power: What are 2-nanometer chips? https://techxplore.com/news/2025-12-tiny-tech-big-ai-power.html

Hybrid exciton quantum state combining organic/ 2D semiconductors for faster, more efficient solar cells and quantum technologies

https://www.eurekalert.org/news-releases/1110555 "interface 2D semiconductor tungsten diselenide with organic semiconductor perylenetetracarboxylic dianhydride... energy transfers from 2D to organic layer in <10⁻¹³ seconds... excitons generally immobile (localized), excitons highly mobile (delocalized), hybrid at interface harnesses best of both: 2D materials' speed/ movement alongside organic chemistry's light-harvesting strengths... solar cells' more efficient energy capture/ transfer, ultrafast optoelectronics, quantum state manipulation for information processing" Related: Hidden symmetries enable efficient quantum state transfer https://www.eurekalert.org/news-releases/1113761

Using solution-processed 2D materials to print communication circuits, sensors, and signal-processing components

https://phys.org/news/2025-12-framework-2d-materials-printable-electronics.html "predicting 2D materials that can be successfully formed into nanosheets via electrochemical exfoliation... key factor: in-plane must be higher than out-of-plane stiffness" (resistance to: deformation vs. deformation perpendicular to material)... dozens of 2D semiconductors identified... printed transistors, and for 1st time printed: digital-to-analog converters, BASK communication circuits, wearable sensors, smart packaging, disposable IoT... future: reduce performance limits in junctions between nanosheets (flake-to-flake)" Related: Analog hardware may solve internet of things’ speedbumps and bottlenecks https://www.eurekalert.org/news-releases/1113506

First field-programmable gate array utilizing 2D semiconductors enables large-scale, complex, fully reconfigurable 2D electronics

https://www.eurekalert.org/news-releases/1105304 "integrates approximately 4K transistors, previously restricted to only a few hundred... integration flow ensures reliable core logic unit operation using only N-type transistors... efficient 2T0C DRAM occupies significantly less chip area, contributing to higher integration density... 2D thickness inherently offers a physical mechanism to resist ionizing radiation damage (Total Ionizing Dose), withstanding 10 Mrad gamma radiation, significantly reducing need for heavy external shielding... aerospace, high-reliability computing"

Scalable 2D transition metal dichalcogenide molybdenum disulfide memtransistor arrays for compact, energy-efficient neuromorphic computing

https://www.eurekalert.org/news-releases/1104774 "integrate data storage/ signal processing... highly uniform, scalable, using precise method controlling Schottky (contact) barriers achieved exposing selected areas to oxygen, allowing precise/ predictable electricity flow... high resistive switching ratio, switches clearly between on/ off, <6.8% variation between devices, 100% fabrication yield, picture classification accuracy >98%... fabrication strategy also applicable to other materials... AI accelerators when integrated with multi-layer stacking or hybrid CMOS-2D"

Using laser to trigger an atomic shift in 2D layered crystal Janus semiconductors, actively controlling light-flow through the material

https://www.eurekalert.org/news-releases/1104606 "molybdenum sulfur selenide/ molybdenum disulfide Janus transition metal dichalcogenides... Janus: top/ bottom atomic layers different chemical species, giving material internal electrical polarity/ high external force/ light sensitivity, which together with strong coupling between layers causes atoms' displacement... optical switches/ components for photonic chips: less heat/ greater efficiency, than electrical... displays, imaging, quantum light sources, detectors sensing smallest vibrations/ pressure changes" Related: Researchers build ultra-efficient optical sensors shrinking light to a chip https://www.eurekalert.org/news-releases/1116989 Dipole‑driven charge trapping in monolayer janus mosse for ultrathin nonvolatile memory devices https://www.eurekalert.org/news-releases/1120175

First fully functional memory chip only a few atoms thick integrated into conventional silicon chip for more powerful/ energy-efficient electronics

https://techxplore.com/news/2025-10-scientists-world-chip-combines-2d.html "only simple chips could be constructed with 2D materials like graphene, and wasn't easy connecting to traditional processors, overcome with full-featured 2D silicon-based hybrid flash memory chip enabled by ATOM2CHIP technology... grows memory material only a few atoms thick directly onto a standard silicon chip... new type of packaging to protect fragile 2D materials from stress, heat and static electricity... tested running at 5 MHz... faster, handles complex operations"

Thin-film dichalcogenides are ideal candidates to replace silicon-based semiconductors due to exceptional electrical properties

https://phys.org/news/2025-09-method-enables-ws8322-epitaxy-growth.html "synthesized monolayer tungsten disulfide lateral homojunctions via in situ hexagonal domain band structure manipulation enabling controllable direct chemical vapor deposition growth... exhibits distinct field-effect characteristics while maintaining atomic lattice matching and customized band alignment at interfaces... logic inverters based on these structures demonstrated rail-to-rail operation with a peak voltage gain of 12, dynamic delay of ~135 μs, and ultralow power consumption of 1.3 nW"

Combining 2 opposing magnetic forces: exchange force tilts overall magnetic alignment cutting energy use 10X, simplifies 2D memory fabrication

https://www.eurekalert.org/news-releases/1099575 "clusters of golden dots on top of chip... faster, smaller memory chips... ferromagnet/ antiferromagnet integrated into single 2D crystal structure... tilt allows electrons switch direction rapidly/ easily without external magnetic field... magnetic alloy made from both magnetic and non-magnetic elements (cobalt, iron, germanium, tellurium)... 2D films bound in layers by van der Waals forces... no problematic seams at the interfaces which compromised reliability and complicated device production"

Freestanding hafnium zirconium oxide membranes can enable advanced 2D field-effect transistors

https://techxplore.com/news/2025-07-freestanding-hafnium-zirconium-oxide-membranes.html "insulating layer (gate dielectric) separates gate electrode from channel with high dielectric constant, effectively storing electrical energy, is difficult, overcome using freestanding hafnium zirconium oxide membranes... freestanding membranes not directly grown on substrate, but transferred onto it... transistor-created inverter, logic gates, 1-bit full adder circuit, MoS2 transistor with 13 nm channel length exhibiting >108 on-off ratio/ 70 mV dec−1 subthreshold swing... small energy-efficient transistors, logic-in-memory" Related: Zirconium-Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory https://advanced.onlinelibrary.wiley.com/doi/10.1002/advs.202509384

Near-perfect defects in 2D carbon-doped hexagonal boron nitride serve as quantum bits, offering purity, scalability and operational stability

https://www.eurekalert.org/news-releases/1088501 "low noise, room-temperature quantum emitters in h-BN films scalably grown using pulsed laser deposition with added carbon atoms generating defects serving as quantum solid-state single-photon emitters... low-temperature 1-step synthesis... high brightness, strong polarization, robust photostability during continuous operation... integrate into chip-based quantum devices/ sensors, for quantum-based communication, information processing, sensing"