Ion beam writes ferroelectric 0 or 1 polarity into aluminum nitride semiconductors that are already widely used in 5G and Wi-Fi hardware

https://www.eurekalert.org/news-releases/1127381

"polarity switches when external voltage applied resulting in non-volatile memory, but very stiff/ difficult to switch, overcome placing defects using 1 nm wide helium ion beam... instead of forcing entire crystal polarity flip at once requiring high energy, defects allow 1D columns of atoms switch independently using 40% less energy... scalable: existing fabrication... robust enough for high-demand environments/ stronger electric piezoresponse, for: micro-actuators in medical devices/ sensors, acoustic resonators in wireless"