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Showing posts with the label valleytronics

Dark exciton valleytronics creation/ manipulation in atomically thin materials interact less with light/ heat, better preserving quantum information

https://www.oist.jp/news-center/news/2025/9/25/shining-light-dark-valleytronics "2 types: momentum-dark/ spin-dark, mismatch prevents immediate recombination: enables more useful timescale/ making more isolated from environmental interactions... use either left- or right-circularly polarized light to selectively populate bright exciton in specific valley, then rapidly turning into numerous dark excitons potentially preserving valley information... classical/ quantum information technologies"

Monolayer SnS: New semiconductors advancing wave-parallel computing with spin-valleytronic applications

  https://www.eurekalert.org/news-releases/1087395 "better/ more compact electronic devices... safely/ cost-effectively grow 1-atom layer SnS sheets on silicon wafers, conduct selectricity/ responds to light... challenging to selectively form SnS from base tin/ sulfur, sometimes producing SnS2 instead, overcome heating sulfur/ tin using low sulfur levels relative to tin which is positioned further away and which mostly sublimes away leaving SnS outer monolayer film behind... linking ferroelectrics, spintronics, valleytronics... light/ tiny spins for faster/ more efficient computers" Related: Valleytronics research using advanced spectroscopy https://www.eurekalert.org/news-releases/1099216

Ultrafast multivalley optical switching in germanium films controls transparency at multiple wavelengths using a single-color pulse laser

https://www.eurekalert.org/news-releases/1080525 "optical bleaching induces nonlinear effect temporarily altering material's properties... not based on microelectromechanics requiring electricity resulting in slow response... overcomes single-color optical nonlinearities' limitations... ultrafast optical switching in both Γ and L valleys, due to intravalley/ intervalley scattering... 240 meV split-off energy at L high symmetric point... Ge is a key material for advanced optical switching, with promising applications in high-speed data transmission and computing"

Hidden electron transport pathways in bilayer graphene confirmed, paving the way for next-generation device design

https://phys.org/news/2025-01-hidden-pathways-graphene-paving-generation.html "nonlocal transport/ edge states exploit externally applied electric fields modulating electronic band gap, essential for electron transport... valleytronics enables faster, more efficient data handling than conventional electronics or spintronics... nonlocal resistance in regions lacking direct current flow... dual-gate graphene device, enabling precise band gap control... etching-processed edges exhibited nonlocal resistance exceeding natural edges by 2 orders magnitude... valleytronics Hall effect device design and development" Related: New era of magnetization: Research sheds light on future applications in spintronics and valleytronics https://phys.org/news/2025-04-era-magnetization-future-applications-spintronics.html

A novel universal light-based technique to control valley polarization in bulk materials

https://phys.org/news/2024-04-universal-based-technique-valley-polarization.html "valleytronics aim to reach the valley polarization in materials, without being restricted by specific chosen material, enabling creation of classical and quantum gates and bits, furthering low-energy consumption, efficient, fast switching information storage... initial measurement was tried on bulk MoS2, saw valley polarization signature... trefoil field, whose symmetry matched triangular sub-lattices constituting hetero-atomic hexagonal materials... rotating incident light field modulated valley polarization" Related: Alloy-engineered valleytronics https://www.eurekalert.org/news-releases/1117434