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Showing posts with the label antiferromagnetic

Antiferromagnetic skyrmions travel parallel to applied electrical currents, remaining immune to the transverse skyrmion Hall effect

https://phys.org/news/2026-08-real-reveal-antiferromagnetic-skyrmions-line.html "transverse deflection hinders ultra-dense/ -fast spintronic memory/ logic, overcome with antiferromagnetic skyrmions, exhibiting negligible Hall deflection angle of 1.4° ± 1.5% (distinguished from ~30° for ferromagnetic), moving straight along current... skyrmions form coherent lattice during current pulses/ repulsive interactions with pinned neighbors upon current cessation which decay over distance... 0-deflection, high-density spintronic memory devices/ magnetic logic circuits"

Non-thermal ultrafast laser pulses directly control/ change antiferromagnetic insulator's magnetic state generating near-zero heat

https://phys.org/news/2026-07-optical-antiferromagnets-storage-devices-energy.html "antiferromagnets stable/ THz speed, but lack net magnetization making control difficult without heavy external magnetic fields... overcome utilizing intense femtosecond laser pulses' momentum/ propagation direction rather than light polarization to manipulate... links fiber-optic communications directly with storage, eliminating intermediate step converting optical data to electrical signals before writing to disk... 1,000's times faster hard drives/ non-volatile memory for data centers generating near-zero heat"

Altering 2D bilayer antiferromagnet orientation enables low-power magnetic photodetectors/ optical switches without moving parts

https://phys.org/news/2026-05-bilayer-antiferromagnet-reveals-photocurrent-flips.html "generating directional photocurrent requires asymmetric crystal structure or external electrical bias moving electrons... bypassed illuminating quantum-geometrically driven sub-nm mechanism generating/ redirecting electricity without changing incoming light... layer-dependent magnetic order breaks symmetry required to guide electron flow, by manipulating relative spin alignment between layers... highly scalable"

Antiferromagnet information technology/ optical communication 1,000X faster than today’s ferromagnetic technologies

https://www.eurekalert.org/news-releases/1120096 "manipulating antiferromagnetic states using intense light pulses to process information trillionth of second timescales... antiferromagnets do not have net external magnetic field, so less susceptible to external interference/ allows for much denser information storage... exceptionally strong coupling between light/ antiferromagnets that can be switched or controlled using light pulses or mechanical strain... quantum/ optical computing, reading/ writing with light"

Antiferromagnetic devices generating asymmetric spin torque, allowing reliable electrical switching of antiferromagnetic memory

https://www.eurekalert.org/news-releases/1119754 "no stray magnetic fields so denser memory/ highly stable against magnetic interference, but internal magnetic structure balanced making switching states difficult... overcome using slightly asymmetric spin torque: when spin current injected, 2 magnetic sublattices absorb current unequally, generating torque flipping Néel vector, enabling controlled data writing... lower power consumption, compatible with existing fabrication/ many antiferromagnetics, high speed (THz)/ efficient, high-density data storage"

Ultrafast switching in Mn₃Sn antiferromagnets for non-volatile magnetic memory and logic spintronic devices

https://www.eurekalert.org/news-releases/1107901 "electrically driven switching without substantial heating and under a weak current... switching completing within few to several tens of ps... fastest was 140 ps, constrained by the short current pulses that could be generated by the current device setup, not by the material itself... faster computing, communications, and advanced electronics,,, future: switch even faster under optimized conditions, including creating even shorter current pulses" Related: Liquid crystal phase in antiferromagnets can be detected electrically https://phys.org/news/2026-03-liquid-crystal-phase-antiferromagnets-electrically.html Blink and you will miss it: magnetism switching in antiferromagnets https://www.s.u-tokyo.ac.jp/en/press/10998/

Dual torque from electron spins drives magnetic domain wall movement in artificial antiferromagnetic thin film, a major step forward in spintronics

https://phys.org/news/2025-10-dual-torque-electron-magnetic-domain.html "faster, smarter, more energy-efficient electronic devices... spintronic memory reading or writing requires efficiently shifting domain walls... artificial antiferromagnetic thin film of cobalt/ Iridium/ platinum alternating layers... 2 cobalt layers coupled aligning magnetic moments in opposite directions... platinum layers generate electron spin streams via Spin Hall Effect spin torque on cobalt layers' magnetic moments... spin torques from top/ bottom platinum layers combine as dual-torque moving domain walls" Related: Optical technique reveals hidden magnetic states in antiferromagnets https://phys.org/news/2026-01-optical-technique-reveals-hidden-magnetic.html Robust topological hall signatures in layered ferromagnet FePd₂Te₂ enables new spintronic technologies https://www.eurekalert.org/news-releases/1127231