Chip-scale, cathode-modulated vacuum/air-channel electron tube eliminates gate leakage current while utilizing standard IC manufacturing

https://www.eurekalert.org/news-releases/1130500

"outruns solid-state silicon transistors by exploiting near-light-speed electron travel in vacuum channels... back-gate design on silicon-on-insulator wafer modulates electron concentration inside an ultrathin silicon cathode rather than blocking electrons mid-transit, suppressing gate current/ allowing stable ambient operation... active circuit block integration into amplifiers, logic gates, extreme high-frequency applications: defense, space"