Printing 3.6-nm-thick gallium oxide skin between metal electrodes/ 2D tungsten disulfide semiconductor achieves record electron mobility

https://www.eurekalert.org/news-releases/1127492

"nearly 296 cm^2/Vs... metal touching 2D sheet creates a massive resistance unless use more voltage, but generates wasted heat, overcome using 3.6 nm gallium oxide layer thick enough to be robust but electrically conductive (3.7 meV electrical barrier, 2 orders magnitude lower) since packed with oxygen vacancies acting as stepping stones... room-temperature liquid metal printing on silicon, low voltage/ high speed, scalable: >30 device array on single chip stable >3 months in normal air/ no protective packaging"