New class of memory-preserving transistors break past Boltzmann limit, drastically lowering voltage required to switch digital states

https://phys.org/news/2026-05-memory-transistors-bypass-boltzmann-limit.html

"bypasses rule restricting energy efficiency/ down-scaling silicon chips, which at room temperature require a minimum voltage change to switch digital states due to thermal properties of electrons, forcing use of higher voltages... attempts to bypass relied on complex, material-specific ferroelectric layers/ quantum tunneling, overcome utilizing intrinsic non-equilibrium charge dynamics. enabling sub-thermal switching... microchip scaling, highly efficient, in-memory non-von Neumann high-density computing"