Freestanding hafnium zirconium oxide membranes can enable advanced 2D field-effect transistors
https://techxplore.com/news/2025-07-freestanding-hafnium-zirconium-oxide-membranes.html "insulating layer (gate dielectric) separates gate electrode from channel with high dielectric constant, effectively storing electrical energy, is difficult, overcome using freestanding hafnium zirconium oxide membranes... freestanding membranes not directly grown on substrate, but transferred onto it... transistor-created inverter, logic gates, 1-bit full adder circuit, MoS2 transistor with 13 nm channel length exhibiting >108 on-off ratio/ 70 mV dec−1 subthreshold swing... small energy-efficient transistors, logic-in-memory"