Reactive magnetron sputtering of thin film (Al,Ga,Sc)N alloy with record-high scandium levels enables ultra-low-power memory devices

https://techxplore.com/news/2025-07-ternary-alloy-pave-ultra-power.html

"overcomes stability limits. Beyond enabling efficient, piezoelectric/ optoelectric properties... non-volatile ferroelectric memories...scandium reduces voltages but faces limitations in stability, overcome alloying AlN with GaN in right proportion expanding amount of Sc that can be incorporated... platinum-/ titanium-coated silicon substrates... reduction in material's coercive field from 5.8 MV/cm to 1.8 MV/cm... memory storage, high-frequency noise filters/ ultra-low-power optical computing systems for 6G smartphones"