Degradation of magnetization in next-generation low-power thin film spintronic memory devices will be reversible

https://www.eurekalert.org/news-releases/1089865

"low-power memory relies on magnetic properties' manipulation... sputtering manufacturing causes magnetic layer becoming oxidized, spoiling magnetism... Cos/MgO structure with underlayers formed of Pt or Au. Pt improves spintronics device robustness, where oxidation damage to Co layer  adjusted changing sputtering power during MgO layer deposition, then annealed with H2... strong catalytic action of Pt enabled magnetic recovery of Co after oxidation and could help us to inform the design of future post-silicon devices"