Precise composition engineering yields ferroelectric ternary alloy films that pave the way for ultra-low-power memory devices

https://www.eurekalert.org/news-releases/1090364

"(Al,Ga,Sc)N thin films with record-high scandium levels... scandium reduces operating voltages, but increasing its concentration affects stability, overcome alloying AlN/ GaN in right proportion using reactive magnetron sputtering... platinum-/ titanium-coated silicon substrates... new region for ferroelectrically active wurtzite crystal structure at higher Sc contents when small fraction of gallium present... attractive piezoelectric/ optoelectric properties... noise filters for 6G, optical computing, non-volatile memory storage"