Antiferromagnetic devices generating asymmetric spin torque, allowing reliable electrical switching of antiferromagnetic memory

https://www.eurekalert.org/news-releases/1119754

"no stray magnetic fields so denser memory/ highly stable against magnetic interference, but internal magnetic structure balanced making switching states difficult... overcome using slightly asymmetric spin torque: when spin current injected, 2 magnetic sublattices absorb current unequally, generating torque flipping Néel vector, enabling controlled data writing... lower power consumption, compatible with existing fabrication/ many antiferromagnetics, high speed (THz)/ efficient, high-density data storage"