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Showing posts with the label Moore's Law

Controlling nanoscale structural gaps in 2D material layers is a powerful tuning mechanism for microelectronics/ non-volatile memory

https://phys.org/news/2026-07-nanoscale-gaps-reveal-atom-thin.html "maps design rules for atomic-scale, gap-controlled 2D materials... when 2D materials placed on slightly uneven metal electrodes, nanoscale gaps form at interface, altering distance electrons must cross... these gaps have greater impact on quantum tunneling/ unwanted electrical leakage creation than material's properties... practical guidance for engineers to control leakage currents, paving the way for smaller, more energy-efficient computer chips and ultra-thin memory devices"
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Flared, dog-bone layout for sub-nm 2D transistors drastically lowers electrical contact resistance that limits performance at atomic scales

https://techxplore.com/news/2026-06-dog-bone-2d-nanoribbon-transistors.html "atomic scale rectangular nanoribbon transistors exhibit contact resistance where metal leads meet thin channel, degrading electrical current limiting performance... overcome widening contact regions at ends while keeping central channel ultra-narrow... maintains high-velocity carrier injection/ energy efficiency as post-silicon 2D semiconductor dimensions continue scaling downward under Moore's Law... enables carrying significantly higher current densities without experiencing typical miniaturization bottlenecks"
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