Infiltrating inorganic metal/ metal oxides into organic poly(methyl methacrylate), for high -sensitivity/ -etch-resistance hybrid photoresists
https://www.eurekalert.org/news-releases/1143347 "carbon-based high-volume extreme UV lithographic patterning of photoresists faces strict absorption, resolution, line-edge roughness, etch resistance limits... overcome using existing CMOS fabrication without complex chemical synthesis/ expensive new infrastructure... infiltration via vapor-phase processes using standard atomic layer deposition chambers or through liquid-based metallic salt solutions... cost-effective, easily accessible path to manufacturing denser, higher-power semiconductor devices"