Sub-10nm molybdenum disulfide semiconductor chips found ideal using formula rather than trial-and-error, for faster/ more power-efficient devices

https://techxplore.com/news/2025-12-formula-energy-barriers-2d-chips.html

"more accurate predictive formula addresses contact resistance hindering 2D semiconductor commercialization... ultra-scaled molybdenum disulfide chips thinner/ more efficient than silicon-based... Schottky barrier forms when materials touch metal electrodes, blocking electron flow... when semi-metallic bialkali metals approach 2D semiconductor at specific angles, electron pathways within molybdenum disulfide expand, lowering barrier.. also, vacuum level energy level shift significantly alters barrier height"

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