Thin-film dichalcogenides are ideal candidates to replace silicon-based semiconductors due to exceptional electrical properties

https://phys.org/news/2025-09-method-enables-ws8322-epitaxy-growth.html

"synthesized monolayer tungsten disulfide lateral homojunctions via in situ hexagonal domain band structure manipulation enabling controllable direct chemical vapor deposition growth... exhibits distinct field-effect characteristics while maintaining atomic lattice matching and customized band alignment at interfaces... logic inverters based on these structures demonstrated rail-to-rail operation with a peak voltage gain of 12, dynamic delay of ~135 μs, and ultralow power consumption of 1.3 nW"