Insulating hexagonal boron nitride carbon atom doped via epitaxial growth for wafer-scale p-type boron carbon nitride semiconductors

https://www.eurekalert.org/news-releases/1150744

Summary: By integrating carbon into the wide-bandgap crystal lattice, the synthesized thin films achieve high hole mobility while maintaining exceptional thermal stability. This scalable wafer-scale synthesis overcomes a major material bottleneck in 2D electronics, providing semiconductor foundries with reliable p-type wide-bandgap materials needed to fabricate ultra-thin, high-power complementary electronic circuits and optoelectronic microchips.