Scalable cobalt silicide nanoflakes yield 10X lower resistance/ 100X greater current-carrying capacity than equivalent copper interconnects
"both compared at 20 nm thickness... as copper microchip interconnects shrink, electrical resistance rises due to increased electron scattering at wire's surface (resistivity size effect)... overcome: single-crystal cobalt silicide, exhibiting lower resistance as get thinner, driven by quantum mechanical surface states facilitating smoother electron flow... maintain low signal loss up to 40 GHz/ remain thermally stable under high operational stress... viable replacement for copper in microchip manufacturing"
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