NbAlN epitaxial growth enables >3X GaN heterostructure electron density in transition-metal-containing polar wurtzite nitrides

https://www.eurekalert.org/news-releases/1142437

"NbAlN layer applied to GaN substrate using reactive sputter epitaxy... increases interfacial 2D electron gas sheet density while maintaining high room-temperature mobility... establishes NbAlN as part of a new class of transition-metal-containing polar nitride semiconductors, expanding design options for carrier density control... higher-power, higher-efficiency power electronics and high-frequency communication hardware"