Hafnium oxide's nanoscale antiferroelectric properties could enable vastly more energy-efficient computer memory/ power systems

https://www.eurekalert.org/news-releases/1145524

"toggles between non-polar/ polar states by controlling strain/ crystal phase transitions under applied electric field, enabling electrical energy's rapid storage/ release without deterioration... easy integration into existing chip fabrication as hafnium oxide already widely utilized there... highly scalable power management systems, ultra-fast/ energy-efficient microelectronics, next-generation memory devices,  high-density energy storage"