Silicon carbide bottom-gate junction field-effect transistor operates reliably at 600°C; uses standard semiconductor manufacturing

https://www.eurekalert.org/news-releases/1141169

"top-gate designs suffer from low controllability/ high electrical leakage at extreme temperatures... overcome adopting bottom-gate structure with well-based isolation, vastly improving threshold voltage control/ drastically suppressing leakage current... industry-standard manufacturing/ ion-implantation techniques, ensuring the design can be integrated into existing semiconductor fabrication processes... power electronics for harsh environments: aerospace, geothermal, industrial, defense"