Quantum-tunneling field-effect transistor bypasses fundamental Boltzmann limit of silicon to enable ultra-low-power ICs, AI hardware

https://www.polyu.edu.hk/media/media-releases/2026/0831_polyu-develops-quantum-tunnelling-field-effect-transistor

"semiconductor / AI computing hardware energy consumption constraints overcome using alternating 2D bismuth/ indium selenide layers fabricated via pulsed laser deposition... charge carriers tunnel quantum mechanically rather than relying on thermionic emission, enabling room-temperature operation using 160 (was 800) mV gate-voltage range... high: output current/ ON-OFF current ratio, needed to drive multiple downstream logic gates... scalable, CMOS fabrication compatible"