Oxygen vacancies in hafnia-zirconia films determine high-density, low-power, ferroelectric, non-volatile memory chip performance

https://phys.org/news/2026-08-tiny-oxygen-gaps-generation-memory.html

"varying ozone levels during atomic layer deposition controls oxygen-vacancy concentrations... oxygen gaps alter both the crystallization temperature and the formation of the metastable orthorhombic phase responsible for ferroelectric data retention... provides actionable engineering strategy to optimize HZO-based ferroelectrics for high-density, low-power semiconductor devices"