High-power GaN semiconductors with low-resistance contacts upgrade EV/ renewable grid power electronics/ fast-charging infrastructure

https://www.eurekalert.org/news-releases/1140965

"efficiency bottleneck in p-GaN semiconductors overcome depositing <10 nm thick magnesium layer on surface/ applying brief 600°C 5 minute soft annealing, creating high-concentration magnesium-doped surface layer without damaging... narrows depletion region/ promotes hole tunneling, achieving record-low contact resistivity... top-down fabrication process faster, cheaper, post-device processing flow compatible... boosts energy efficiency/ performance... EV and data center power transistors/ LEDs"

Related: Researchers develop stepwise evaporation method to reduce contact resistance in transistors
https://www.eurekalert.org/news-releases/1141543