Development of a transparent and flexible ultra-thin memory device

https://phys.org/news/2021-12-transparent-flexible-ultra-thin-memory-device.html

"heterogeneous... nanostructure... monolayered zero-dimensional (0D) quantum dots were formed and sandwiched between two insulating 2D hexagonal boron nitride (h-BN)... maintains above 80% transparency and memory function even when bent... Instead of conductive graphene, by presenting a quantum dot stacking control technology"