Ultra-thin carbon-based insulator maintains high dielectric strength preventing electrical leakage/ quantum tunneling in sub-nm logic gates

https://www.eurekalert.org/news-releases/1140661

"surface roughness/ sub-nm interface gaps govern electron leakage far more than material's intrinsic insulating capacity... uses monolayer hexagonal boron nitride and transition metal dichalcogenides across varied electrode architectures... provides actionable design guidelines for semiconductor engineers to build smaller, more reliable, and energy-efficient 2D logic devices and ultra-thin memory hardware"