Oxygen-tunnel diffusion within high-density stacked DRAM/ high-bandwidth memory clears trapped charges/ prevents thermal degradation

https://techxplore.com/news/2026-08-oxygen-tunnel-3d-memory-reliability.html

"oxygen vacancies cause: device instability, unrestrained oxygen flow oxidizing metal electrodes, heat dissipation problems, degrading performance... overcome sending oxygen into multilayer interlayer dielectric channel, healing defect vacancies, simultaneously blocking oxygen migration toward metal electrode... world-class: current density, data retention, operational stability, <50 mV threshold voltage shift after 10M stress cycles... CMOS integratable compute-in-memory for advanced AI accelerators"