Orbital torque-driven magnetic tunnel junction on an 8-inch pilot line with shared electrode occupies 45% less area than SOT-MRAM

https://www.eurekalert.org/news-releases/1140355

"electrical resistance/ scaling limitations overcome integrating ruthenium-tungsten bilayer write electrode converting electrical charge into orbital angular momentum... maintains perpendicular magnetic anisotropy/ tunneling magnetoresistance through high-temperature manufacturing... consistent resistance uniformity, 28.7 ps switching speeds, reduced writing voltages... significantly denser/ more energy-efficient memory architecture... major semiconductor milestone: practical, scalable hardware orbitronics"