CMOS/ GaN chip layers' back-end integration with 0-power 5G/ 6G front-end non-volatile RF switches occupies 25,000X less area

https://www.eurekalert.org/news-releases/1137229

"switches: 2X2 μm, 8-nm-thick hexagonal boron nitride memristors utilize brief electrical pulse to form/ dissolve nanoscale gold pathway within memristors making them non-volatile (retaining on/ off state without power)... GaN layers: upper wiring of commercially manufactured GaN microchips... scalable, full reconfiguration of monolithic microwave integrated circuits, including adjusting signal strength, changing filter frequencies, and redirecting signals"