Integrating ultra-wide bandgap gallium oxide onto high-thermal-conductivity diamond substrate interfaces reduces thermal resistance

https://www.eurekalert.org/news-releases/1137341

"beta-gallium oxide offers exceptionally high breakdown electric field for next-generation power electronics, but low intrinsic thermal conductivity causes severe localized self-heating/ thermal breakdown... overcome optimizing interface phonon transport/ interfacial chemical bonding/ atomic alignment at heterostructure boundary lowering thermal boundary resistance... substrate dissipates heat... high: -power density RF amplifiers/ -voltage switches far beyond silicon performance limits"

Related: Phonons travel in focused, directional paths in room temperature boron arsenide; heat guided along specific crystallographic routes
https://www.eurekalert.org/news-releases/1137333