Foundry-compatible routes achieving ultra-low resistance Ohmic contacts enable sub-1nm 2D transistor scaling

https://www.eurekalert.org/news-releases/1137988

"2D semiconductor-metal interfaces exhibit Fermi-level pinning/ high contact resistance, degrading dichalcogenides' carrier mobility, overcome establishing low-energy semimetallic contacts (bismuth/antimony)/ van der Waals integration forming Ohmic Schottky contacts without damaging atomic monolayers... <100 Ω μm contact resistance, maintaining thermal stability during standard back-end-of-line integration... field-effect transistors"