Wolfspeed's 1200 & 750V silicon carbide MOSFETs: up to 27% reduced on-resistance/ 200°C increased continuous junction temperature

https://www.semiconductor-today.com/news_items/2026/jun/wolfspeed-090626.shtml

"reducing conduction losses while raising heat thresholds optimizes mass-market EV drivetrain/ industrial power grid efficiency... enables more compact traction inverters (5x5 mm footprint), maximized current capability, improved durability (continuous junction temperatures up to 200°C while lowering overall switching losses)... world's first fully automated facility dedicated to cooking and processing larger 200 mm silicon carbide wafers using existing fabrication toolsets"