Redesigned optical framework for High-NA Extreme UV lithography mitigates critical aberrations and polarization errors

https://www.eurekalert.org/news-releases/1132479

"semiconductor sub-2nm node High-NA EUV lithography fabrication optimized for commercial yield/ pattern fidelity... illumination/ projector optics used in fabrication redesigned arranging 2 stages of concave-convex mirror pairs along single axis cancel out detrimental mask 3D defects while maintaining sharp, high-NA image contrast, for denser, highly efficient chips... significantly fewer optical components, 75% reduced fabrication cost, minimized electrical signal travel distances... data centers"