CEA-Leti's highly efficient low-power non-volatile 22nm ferroelectric RAM handles memory-intensive processing directly on edge AI device

https://www.newelectronics.co.uk/content/news/cea-leti-demonstrates-22nm-feram-breakthrough-for-edge-ai-applications

"1.3V... bypasses von Neumann memory density limitations utilizing 3D vertical capacitor architecture allowing efficient heavy data workload processing right on hardware resulting in memory cells 2.5X smaller than standard SRAM at same node... hafnium zirconium oxide thin film suppresses "wake-up" stability problem from initial usage cycles... faster, ultra-low-power memory alternative necessary for hosting complex artificial intelligence applications directly on edge devices"