Spintronic nano-device stores information in four distinct states within a single cell, doubling binary non-volatile memory storage

https://phys.org/news/2026-03-nanoengineered-spintronic-device-ways.html

"multi-layered magnetic tunnel junction enables magnetic anisotropy controllable by 4-way switching between stable magnetic configurations, allowing single memory cell to store 2 bits of data instead of 1...  uses significantly less energy, read/ write millions times without degrading... ability to hold multiple states perfect for neuromorphic computing, inherent resistance to radiation/ extreme temperatures perfect for deep-space/ military"

Related: Electric current stabilizes spins at unstable points for new types of computing
https://phys.org/news/2026-03-electric-current-stabilizes-unstable.html