Ferroelectric capacitor's entire device stack is only 30 nm thick including electrodes, for high-density electronic integration

https://techxplore.com/news/2025-12-ultrathin-ferroelectric-capacitors-compact-memory.html

"3-layer sandwich: 5 nm platinum top electrode, 20 nm scandium-doped aluminum nitride ferroelectric layer, 5 nm platinum bottom electrode... easily embedded into logic circuits... treating the bottom platinum electrode at 840°C improved its crystal structure, vital for maintaining switching performance in thinner films... mobile/ IoT devices, integrating logic/ non-volatile (due to high remanent polarization from using scandium-doped aluminum nitride) memory, nano-scale ferroelectric RAM/ tunnel junctions"