Ultrafast 20 ns, stable, 2D floating gate non-volatile flash memory built upon a van der Waals heterostructure and a metal-nanocrystal storage layer
https://www.eurekalert.org/news-releases/1105690
"molybdenum disulfide channel, hexagonal boron nitride insulating tunneling dielectric, discrete platinum nanocrystal floating gate storage layer... superior data retention/ reliability... single defect/ leakage in tunneling layer does not cause complete charge loss... minimized charge trapping defects ensures sharp interfaces, contributing to stability/ speed... 10 year retention time at room temperature... 20K cycle endurance... in-memory computing reduces the number of transistors needed"
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