World's lowest write power operation of 156 fJ in 75° canted high-speed SOT-MRAM cell achieved; holds potential to replace SRAM

https://www.eurekalert.org/news-releases/1084509

"record-breaking energy-efficiency... spin-orbit-torque magnetoresistive random access memory's low energy efficiency at fast writing speeds/ needs external magnet, both previously overcome, but now problem of power amount required to write data overcome, focusing on canted SOT tilt angle/ free layer magnetic anisotropy, using micro-magnetic simulation to reduce write power...fabricated using 300mm wafer process... reduces write power 35%, 70 thermal stability factor, 170% TMR ratio"

Related: Breakthrough MRAM chips deliver faster, ultra-efficient computer memory
https://www.thebrighterside.news/post/breakthrough-mram-chips-deliver-faster-ultra-efficient-computer-memory/