Highly integrated bidirectional 1200 V GaN switch with integrated free-wheeling diodes based on wide-bandgap semiconductor gallium nitride

https://www.eurekalert.org/news-releases/1082185

"efficient renewable energy conversion/ storage, compact, fast charging EVs... fabricated using GaN-on-insulator technology... highly insulating silicon carbide/ sapphire carrier substrate improve insulation between components/ increases breakdown voltage... blocks voltage/ conducts current in 2 directions, saving chip space/ reducing conduction losses... also, conventional GaN transistor with gate contact as bidirectional switch in 3-level T-type converter... grid-connected power converters, electric drive systems"