Spintronics based Magnetoresistive Random Access Memory utilizes thin film with high perpendicular magnetic anisotropy

https://www.eurekalert.org/news-releases/1069185

"cobalt-manganese-iron alloy has both high tunnel magnetoresistance/ high perpendicular magnetic anisotropy, allowing them to integrate large number of bits with high capacity/ high thermal stability...  reduced power consumption.... large memory capacity for MRAM devices using a simulation. The results of this research will offer a new candidate for memory materials, and contribute to the continuous development of novel spintronics memory devices, with the aim of creating a more sustainable society for everyone"