Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

https://www.eurekalert.org/news-releases/1061659

"grown wafer-scale uniform green GaN epilayer on 4 and 6" Si (111) substrate... accurate color reproduction/ quality image, high energy conversion efficiency, balanced color spectrum, considerable brightness (>107 cd/m² nits)/ resolution (up to 1080×780)... epilayer with low 5.25×108 cm-2 dislocation density, low 16.7 μm wafer bowing, high STDEV<1 nm wavelength uniformity... high-definition movie/ image playback... seamless integration of Micro-LED displays with Si-based CMOS drivers"