Researchers develop approach to fabricate highly performing transistors based on 2D semiconductors

https://techxplore.com/news/2024-09-approach-fabricate-highly-transistors-based.html

"high cohesive energy platinum (or tungsten) /hexagonal boron nitride dielectric metal gate stack electrodes show 500X lower leakage current, >=25 MV/cm dielectric strength... chemical vapor deposition gate dielectric in 2D transistors... vertical Pt/h-BN/MoS2 transistors... clean van der Waals interface between MoS2 substrate/ h-BN improves reliability/ performance, minimizing defects, enhancing gate control... future: fully 2D transistors, solve contact issues between 2D channels/ electrodes enhancing performance"