Integrating thin insulating layers with 2D semiconductors enables energy efficient, highly performing electronics

https://techxplore.com/news/2024-07-strategy-fin-metal-nanosheets-2d.html

"2D transistors with electrical capacitance comparable to SiO2... deposit 2-nm-thick dielectrics based on Al2O3 or HfO2 onto 2D substrates of vertically grown metals, forming metal/ oxide stack... integrate with 2D semiconductors forming van der Waals interface... atomic layer deposiion/ 2D semiconductor incompatibility solved, and avoids destructive step of top-gate electrode deposition process onto ultrathin dielectrics... 10−6 A cm−2 leakage currents, low 0.45 V operating voltage, 1 mV hysteresis"