Electronics engineers successfully integrate MoS₂ field-effect transistors on a 200 mm wafer

https://techxplore.com/news/2024-05-electronics-successfully-mos-transistors-mm.html

"large-scale transistor arrays using metal-organic chemical vapor deposition compatible with current processes... eliminated Schottky barrier at interface between MoS2 and metal enhancing carrier mobility... processed at commercial facility, achieving >99.9% yield... 21 cm2 V−1 s−1 mobilities, 3.8 kΩ µm contact resistances, 120 µA µm−1 on-current densities, similar to those achieved with single-crystalline fakes... lack of impurities on contact, MoS2 materials peeling off prevention... smaller, flexible devices"