ANL develops redox gating controlling electron movement in and out of microelectronic semiconductors

https://www.morningstar.com/news/business-wire/20240318719560/argonne-scientists-use-novel-technique-to-create-new-energy-efficient-microelectronic-device

"redox = chemical reaction causing transfer of electrons... when the voltage reaches a certain threshold, roughly half of a volt, the material begins to inject electrons through the gate from a source redox material into a channel material... energy efficient transistor-like switching between more conducting and more insulating states... enables sub-volt electron flow modulation preventing system damage (overheating)... neuromorphic chips, low power quantum materials"