Carbon nanotube–based MOSFETs doped using a scalable technique

https://techxplore.com/news/2023-11-carbon-nanotubebased-mosfets-doped-scalable.html

"localized solid-state extension doping... SiNx donor defect densities approaching 5 × 1019 cm−3, which could sustain carbon nanotube carrier densities 0.4 nm−1 in extensions of scaled nanotube devices... makes doping and polarity control inside nanotubes compatible with existing large-scale electronics production... shrink transistor size without compromising performance or energy efficiency"

Related: Researchers triple carbon nanotube yield for LEDs, solar cells, flexible and transparent electronics

https://phys.org/news/2023-11-triple-carbon-nanotube-yield-solar.html