A scalable method to create ferroelectric FETs based on AlScN and 2D semiconductors
https://phys.org/news/2023-06-scalable-method-ferroelectric-fets-based.html
"gate insulators ferroelectric materials switch and store electricity... AI, low power... widespread adoption of these dual-function transistors... modulates 2D conductivity into high or low resistance representing information stored... superlative ferroelectric deposited in BEOL compatible processes and 2D semiconductors... integrate Si CMOS... switch 3–4 volts, store data. easily integrated with CMOS...5 nm"
Comments
Post a Comment