Building up new data-storage memory

https://techxplore.com/news/2022-06-data-storage-memory.html 

"3D stacked memory cell based on ferroelectric and antiferroelectric field-effect transistors (FETs) with atomic-layer-deposited oxide semiconductor channel... non-volatile... vertical structure increases information density and reduces energy needs. Hafnium oxide and indium oxide... Information stored by degree of polarization in ferroelectric layer... efficient erasure operations within the oxide semiconductor channel... stable for at least 1,000 cycless"

Related:

Novel lateral data storage: Two-dimensional ferroelectric semiconductor memory
https://techxplore.com/news/2023-08-lateral-storage-two-dimensional-ferroelectric-semiconductor.html

Electronic stacking technique exponentially increases number of transistors on chips, enabling more efficient AI hardware
https://www.eurekalert.org/news-releases/1068232