Plasma treatment enhances semiconductor performance, not only for DRAM but also for electronic devices and energy storage systems

https://techxplore.com/news/2025-10-plasma-treatment-strategy-semiconductor-device.html

"Al-doped TiO₂, used as dielectric shielding against high electrical fields, suffers electrical leakage/ reduced stability, overcome by exposing shielding to argon/ oxygen plasma... transfers energy to shielding surface, facilitating atomic-scale migration of aluminum dopants/ reordering of the crystal lattice... fills oxygen vacancies that caused electrical leakage... 30% higher dielectric constants, up to nearly 40X lower leakage currents... Al atoms settled into lattice positions restoring crystallinity"